Category Archives: News in English

Veeco and ALLOS technical collaboration accelerates the pace for 200 mm GaN-on-silicon micro LED applications for leading global customers

Plainview, N.Y., Nov. 8, 2018—Veeco Instruments Inc. (Nasdaq: VECO) and ALLOS Semiconductors GmbH announced today the completion of another phase of their mutual effort to provide the industry with leading GaN-on-Silicon epiwafer technology for microLED production. The purpose of the companies’ most recent collaboration was to demonstrate the reproducibility of ALLOS’ 200 mm GaN-on-Si epiwafer

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Meet ALLOS’ speakers at upcoming conferences 2018 and 2019

For the upcoming months ALLOS and its partners are invited to give talks at several major industry and scientific conferences around the globe.

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Dr. Nishikawa explains scientific background of ALLOS’ GaN-on-Si performance in invited talk at E-MRS conference

In an invited talk at the annual conference of the European Material Research Society (E-MRS) in Warsaw ALLOS’ CTO Dr. Atsushi Nishikawa explained the scientific background of how ALLOS’ GaN-on-Si technology for High Power Electronics (HPE) achieves excellent isolation and dynamic performance by using high crystal quality GaN and no carbon doping.

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LEDinside talks with ALLOS CEO about the future of micro LED

LEDinside’s Eva Huang interviewed ALLOS’ CEO Burkhard Slischka about the challenges for the upcoming micro LED market. ALLOS sees GaN-on-Si as a key enabler to achieve the needed cost and yield improvements. To underpin this, the interview covered key issues like wafer uniformity, the usage of CMOS lines, the possibility of 300 mm GaN-on-Si and

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“How can GaN-on-Si compete with SiC in the market for 1200 Volt devices?” – ALLOS presents at CS International conference in Brussels

ALLOS’ CEO Burkhard Slischka presented ALLOS’ latest developments on epiwafer technology for 1200 V power devices at this week’s CS International conference in Brussels. Beside record breakdown voltages on both vertical and lateral test setups, he also showed the very low trapping effects of the material, which are crucial to achieve good dynamic device performance.

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ALLOS wins prestigious CS Industry Award for Substrates and Materials 2018

A big surprise hit us this Friday and caused cheer and celebration in the ALLOS team: We won this year’s prestigious Compound Semiconductor Industry Award in the Substrates and Materials category. YES!

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IEMN shows more than 1400 V on ALLOS’ new GaN-on-Si epiwafer product

Villeneuve-d’Ascq, France and Dresden, Germany – 1st February 2018 – Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.    A team around Dr. Farid Medjdoub from IEMN research institute in France has made devices and conducted

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ALLOS’ Technology Progress is Highlighted by LEDinside Article

31.01.2018 In today’s article “Must Read: Worldwide Micro LED R&D Progress” LEDinside is highlighting ALLOS’ progress in demonstrating uniform 200 mm GaN-on-Si epiwafer for blue and gree micro LEDs. Read the article on LEDinsides website.

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Interview of i-Micronews with Veeco’s Christopher Morath and ALLOS’ Alexander Loesing

Yole Développement has today published an interview titled “ALLOS-Veeco collaboration enables better GaN-on-silicon microLEDs” with Alexander Loesing, CMO of ALLOS, and Christopher Morath, senior director, strategic marketing at Veeco. Content of the interview is to explain the collaboration between Veeco and ALLOS, what it offers to microLED manufacturing and the possible applications of GaN-on-silicon for

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ALLOS’ Dr. Nishikawa talks at SEMICON Japan about the physics and innovative techniques to improve the isolation of GaN-on-Si epiwafer

At this week’s SEMICON Japan industry exhibition ALLOS’ Atsushi Nishikawa was invited to talk about improvements in isolation of GaN-on-Si epiwafer for high-power device application. “It is a pleasure to talk in my home-country Japan” comments Nishikawa “In our opinion the power semiconductor industry needs to have a dialogue about how to achieve the required

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