Category Archives: News in English

IEMN shows more than 1400 V on ALLOS’ new GaN-on-Si epiwafer product

Villeneuve-d’Ascq, France and Dresden, Germany – 1st February 2018 – Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.    A team around Dr. Farid Medjdoub from IEMN research institute in France has made devices and conducted

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ALLOS’ Technology Progress is Highlighted by LEDinside Article

31.01.2018 In today’s article “Must Read: Worldwide Micro LED R&D Progress” LEDinside is highlighting ALLOS’ progress in demonstrating uniform 200 mm GaN-on-Si epiwafer for blue and gree micro LEDs. Read the article on LEDinsides website.

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Interview of i-Micronews with Veeco’s Christopher Morath and ALLOS’ Alexander Loesing

Yole Développement has today published an interview titled “ALLOS-Veeco collaboration enables better GaN-on-silicon microLEDs” with Alexander Loesing, CMO of ALLOS, and Christopher Morath, senior director, strategic marketing at Veeco. Content of the interview is to explain the collaboration between Veeco and ALLOS, what it offers to microLED manufacturing and the possible applications of GaN-on-silicon for

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ALLOS’ Dr. Nishikawa talks at SEMICON Japan about the physics and innovative techniques to improve the isolation of GaN-on-Si epiwafer

At this week’s SEMICON Japan industry exhibition ALLOS’ Atsushi Nishikawa was invited to talk about improvements in isolation of GaN-on-Si epiwafer for high-power device application. “It is a pleasure to talk in my home-country Japan” comments Nishikawa “In our opinion the power semiconductor industry needs to have a dialogue about how to achieve the required

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ALLOS speaks at Huawei’s internal ‘Material Forum’ about micro LED display manufacturing challenges

Thank you to the Huawei team for inviting ALLOS’ Burkhard Slischka to speak about micro LED display manufacturing challenges at Huawei‘s internal ‘Material Forum’ conference in Munich. We enjoyed the outstanding presentations, the very interactive format and in-depth discussions with the high-level attendees. Thank you for the positive and valuable feedback! You can download a

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ALLOS’ CTO was panelist at Electronic Material Symposium in Japan

The Electronic Material Symposium held this week in Shiga, Japan organized a rump session titled ‘Does your research link with business?’ ALLOS’ CTO Dr. Atsushi Nishikawa, who was invited among other entrepreneurs in GaN and SiC devices, said “I enjoyed the fruitful discussion not only with young students and researchers but also with some of

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SSL 2017 Beijing: ALLOS unique interlayer design enables strain-free and large-diameter epiwafers without bow and cracks

ALLOS’ CEO Burkhard Slischka talks at SSL 2017 conference in Beijing   Recently, micro LED displays have attracted tremendous attention due to reduction of energy consumption and better display quality compared with conventional TFT-LCD or OLED displays. While in conventional LED making GaN-on-sapphire has the biggest market share for blue and green LED chips in

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VEECO and ALLOS Demonstrate Industry-leading 200 mm GaN-on-Si Performance to enable Micro-LED Adoption

Plainview, N.Y., November 1, 2017 – Veeco Instruments Inc. (Nasdaq: VECO) announced today the completion of a strategic initiative with ALLOS Semiconductors (ALLOS) to demonstrate 200mm GaN-on-Si wafers for Blue/Green micro-LED production. Veeco teamed up with ALLOS to transfer their proprietary epitaxy technology onto the Propel® Single-Wafer MOCVD System to enable micro-LED production on existing

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“The Right Strategy for Developing GaN Power Electronics” – ALLOS’ CEO Burkhard Slischka talks at SEMI China’s CPSIC 2017 conference in Nanjing

SEMI China invited ALLOS’ CEO Burkhard Slischka to talk about market entry strategies into GaN-on-Si for power electronics at this year’s CPSIC conference in Nanjing.

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ALLOS’ CTO is invited to give a lecture at Osaka University about history of GaN-on-Si development and its future

Thanks to Prof. Ryuji Katayama of Osaka University, ALLOS’ Atsushi Nishikawa is invited to give a lecture this week to undergraduate and graduate students at Osaka University about the history of GaN-on-Si technology and possible future development. For ALLOS it remains important to engage with the academic community and to encourage students and young researchers

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