Category Archives: News in English

ALLOS’ Dr. Nishikawa talks at SEMICON Japan about the physics and innovative techniques to improve the isolation of GaN-on-Si epiwafer

At this week’s SEMICON Japan industry exhibition ALLOS’ Atsushi Nishikawa was invited to talk about improvements in isolation of GaN-on-Si epiwafer for high-power device application. “It is a pleasure to talk in my home-country Japan” comments Nishikawa “In our opinion the power semiconductor industry needs to have a dialogue about how to achieve the required

Continue Reading →

ALLOS speaks at Huawei’s internal ‘Material Forum’ about micro LED display manufacturing challenges

Thank you to the Huawei team for inviting ALLOS’ Burkhard Slischka to speak about micro LED display manufacturing challenges at Huawei‘s internal ‘Material Forum’ conference in Munich. We enjoyed the outstanding presentations, the very interactive format and in-depth discussions with the high-level attendees. Thank you for the positive and valuable feedback! You can download a

Continue Reading →

ALLOS’ CTO was panelist at Electronic Material Symposium in Japan

The Electronic Material Symposium held this week in Shiga, Japan organized a rump session titled ‘Does your research link with business?’ ALLOS’ CTO Dr. Atsushi Nishikawa, who was invited among other entrepreneurs in GaN and SiC devices, said “I enjoyed the fruitful discussion not only with young students and researchers but also with some of

Continue Reading →

SSL 2017 Beijing: ALLOS unique interlayer design enables strain-free and large-diameter epiwafers without bow and cracks

ALLOS’ CEO Burkhard Slischka talks at SSL 2017 conference in Beijing   Recently, micro LED displays have attracted tremendous attention due to reduction of energy consumption and better display quality compared with conventional TFT-LCD or OLED displays. While in conventional LED making GaN-on-sapphire has the biggest market share for blue and green LED chips in

Continue Reading →

VEECO and ALLOS Demonstrate Industry-leading 200 mm GaN-on-Si Performance to enable Micro-LED Adoption

Plainview, N.Y., November 1, 2017 – Veeco Instruments Inc. (Nasdaq: VECO) announced today the completion of a strategic initiative with ALLOS Semiconductors (ALLOS) to demonstrate 200mm GaN-on-Si wafers for Blue/Green micro-LED production. Veeco teamed up with ALLOS to transfer their proprietary epitaxy technology onto the Propel® Single-Wafer MOCVD System to enable micro-LED production on existing

Continue Reading →

“The Right Strategy for Developing GaN Power Electronics” – ALLOS’ CEO Burkhard Slischka talks at SEMI China’s CPSIC 2017 conference in Nanjing

SEMI China invited ALLOS’ CEO Burkhard Slischka to talk about market entry strategies into GaN-on-Si for power electronics at this year’s CPSIC conference in Nanjing.

Continue Reading →

ALLOS’ CTO is invited to give a lecture at Osaka University about history of GaN-on-Si development and its future

Thanks to Prof. Ryuji Katayama of Osaka University, ALLOS’ Atsushi Nishikawa is invited to give a lecture this week to undergraduate and graduate students at Osaka University about the history of GaN-on-Si technology and possible future development. For ALLOS it remains important to engage with the academic community and to encourage students and young researchers

Continue Reading →

ICNS 2017: ALLOS explains why carbon-doping is not needed to achieve high isolation in GaN-on-Si

Strasbourg, France – 28th July 2017 – At this week’s ICNS scientific conference ALLOS’ co-founder and CTO Dr. Atsushi Nishikawa discussed three common believes about GaN-on-Si: Firstly, that the usage of carbon would be inevitable, secondly that using interlayers in the buffer would be a source of leakage and thirdly that the choice of the

Continue Reading →

ALLOS was invited to talk about micro LEDs at LED Taiwan 2017

ALLOS Semiconductors’ co-founder and CMO Alexander Loesing was invited to talk about “Who will benefit from micro LEDs with new generation GaN-on-Si?” at last week’s LED industry event in Taiwan. After briefly looking at the challenges of using GaN-on-Si for conventional LEDs the presentation focused on the opportunities and challenges for the LED and silicon

Continue Reading →

ALLOS’ low leakage, doping-free 600 V HEMT epiwafer technology is running in parallel on both Aixtron G5 and Veeco K465i at a customer

Dresden, Germany – 16th February 2017 – The latest generation of ALLOS Semiconductors’ high crystal quality GaN-on-Si process achieves excellent isolation without doping. Applying this technology ALLOS recently concluded the development of customized epi structures with very low leakage for a power electronics customer. The epiwafer growth processes were established in this customer’s Aixtron G5

Continue Reading →