The Electronic Material Symposium held this week in Shiga, Japan organized a rump session titled ‘Does your research link with business?’ ALLOS’ CTO Dr. Atsushi Nishikawa, who was invited among other entrepreneurs in GaN and SiC devices, said “I enjoyed the fruitful discussion not only with young students and researchers but also with some of
Category Archives: News in English
ALLOS’ CEO Burkhard Slischka talks about ALLOS micro LED strategy at SSL 2017 conference in Beijing
Plainview, N.Y., November 1, 2017 – Veeco Instruments Inc. (Nasdaq: VECO) announced today the completion of a strategic initiative with ALLOS Semiconductors (ALLOS) to demonstrate 200mm GaN-on-Si wafers for Blue/Green micro-LED production. Veeco teamed up with ALLOS to transfer their proprietary epitaxy technology onto the Propel® Single-Wafer MOCVD System to enable micro-LED production on existing
SEMI China invited ALLOS’ CEO Burkhard Slischka to talk about market entry strategies into GaN-on-Si for power electronics at this year’s CPSIC conference in Nanjing.
Thanks to Prof. Ryuji Katayama of Osaka University, ALLOS’ Atsushi Nishikawa is invited to give a lecture this week to undergraduate and graduate students at Osaka University about the history of GaN-on-Si technology and possible future development. For ALLOS it remains important to engage with the academic community and to encourage students and young researchers
Strasbourg, France – 28th July 2017 – At this week’s ICNS scientific conference ALLOS’ co-founder and CTO Dr. Atsushi Nishikawa discussed three common believes about GaN-on-Si: Firstly, that the usage of carbon would be inevitable, secondly that using interlayers in the buffer would be a source of leakage and thirdly that the choice of the
ALLOS Semiconductors’ co-founder and CMO Alexander Loesing was invited to talk about “Who will benefit from micro LEDs with new generation GaN-on-Si?” at last week’s LED industry event in Taiwan. After briefly looking at the challenges of using GaN-on-Si for conventional LEDs the presentation focused on the opportunities and challenges for the LED and silicon
Dresden, Germany – 16th February 2017 – The latest generation of ALLOS Semiconductors’ high crystal quality GaN-on-Si process achieves excellent isolation without doping. Applying this technology ALLOS recently concluded the development of customized epi structures with very low leakage for a power electronics customer. The epiwafer growth processes were established in this customer’s Aixtron G5
Based on a background talk with ALLOS’ CEO Burkhard Slischka and her own research Rebecca Pool of Compound Semiconductor magazine published an article named „All Eyes on ALLOS“. It looks at the latest GaN-on-silicon developments and ALLOS’ role in the industry. It is available free of charge on CS‘ website here (registration might be required).
Will Samsung transform and conquer the LED industry with disruptive GaN-on-Si technology? Compound Semiconductor magazine gave ALLOS the opportunity to comment on the situation. Read the article in today’s issue of CS magazine or download your copy here. Background: In the March issue of CS magazine Samsung published an article about its GaN-on-Si LED technology