You can meet ALLOS team members as presenters and participants on conferences globally. Feel free to contact us in advance to arrange for personal meetings.
Due to Covid-19 all conference participations for 2020 are postponed. Please do not hesitate to contact us to arrange a video conference or webinar. Stay safe – we wish you all the best!
We are pleased to be invited again to present our latest results at the joint conference of SSL China and IFWS in Shenzhen, Guangdong, China from 25th to 27th November 2019. During SSL China we will present about our 1 bin® micro LED technology being ready for production and at IFWS about the benefits of our unique approach to avoid carbon-doping in GaN-on-Si for high power electronics.
ALLOS’ CEO Burkhard Slischka will present at International Micro LED Display Conference at Touch Taiwan on August 29 about: „What is the right LED epiwafer strategy for mass production of micro LED displays?“
On prestigious SID Display Week ALLOS’ Burkhard Slischka will give an invited talk to present the company’s latest generation of GaN-on-Si high performance material for micro LED and other novel display technologies. Display Week is the perhaps most important conference of the global display industry and will take place from May 14-19, 2019 in San Jose, USA.
As every year, ALLOS will not miss this must see event showcasing all the latest development in high power electronics: PCIM in Nürnberg, Germany. Alexander Loesing of ALLOS will participate on all three days of the exhibition from 7th to 9th May 2019.
SID invited ALLOS to present about its micro LED technology at the International Conference on Display Technology in Kunshan, Suzhou. ICDT is hosted by SID at the Kunshan International Convention and Exhibition Center, Suzhou from 26th to 29th March 2019.
ALLOS’ CEO Burkhard Slischka will participate at CS International conference in Brussels from 25th to 27th March 2019.
Dr. Nishikawa will give an invited talk at the International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma) at Nagoya Institute of Technology, Aichi, Japan from March 17 to March 21, 2019.
On February 6, 2019 Dr. Nishikawa will present an invited talk at Photonics West in San Francisco, United States, which title is “Achieving high uniformity and yield for micro LED applications with precisely strain-engineered large-diameter epiwafers (Session 8: Paper 10940-71)”.
On November 12, 2018 ALLOS’ CTO Dr. Atsushi Nishikawa together with executives from MOCVD equipment maker Veeco Inc. will give a luncheon seminar at the International Workshop on Nitride semiconductors (IWN) in Kanazawa, Japan and talk about our latest 200 mm results for micro and other novel LED application. Places at this invitation-only event are limited, please register through IWN webpage if would like to join.
At the same conference on November 17, 2018, Alaleh Tajalli from University of Padova will present a GaN-on-Si HPE paper co-authored with ALLOS and IEMN of France, titled “High voltage GaN-on-silicon with low-trapping up to 1200V (ED15-3)”.
For October 24, 2018 ALLOS’ CEO Burkhard Slischka is invited by SEMI China to talk about “GaN-on-Si manufacturing for micro LED and High Power Electronics applications” at its “Compound Semiconductor Equipment and Manufacturing Conference” in Nanchang, China.
ALLOS’ CTO Dr. Atsushi Nishikawa will explain the scientific background of ALLOS’ excellent isolation and dynamic performance in an invited talk at the prestigious E-MRS conference this September in Warsaw.
Attend our presentation at the upcoming meeting of Deutsche Flachdisplay Forum (DFF) about the status of GaN-on-Si epiwafer technology, ALLOS’ view on micro LED display development and meet our CEO Burkhard Slischka and CTO Dr. Atsushi Nishikawa.
ALLOS’ CEO Burkhard Slischka will present at this years CS International for the first time about “How can GaN-on-Si compete with SiC in the market for 1200 Volt devices?” The ALLOS team will also keep their fingers crossed as we are nominated for the second time for the industry-leading CS Award, and the winner will be announced at the conference as well.
To this year’s SEMICON Japan industry exhibition ALLOS’ CTO Atsushi Nishikawa is invited to talk about improvements in isolation of GaN-on-Si epiwafer for high-power device application.
ALLOS’ Burkhard Slischka looks forward to the opportunity to present at Huawei’s internal ‘Material Forum’ about micro LED display manufacturing challenges.
Meet ALLOS’ CTO Atsushi Nishikawa in Shiga where he is panelist at the Electronic Material Symposium.