News

GaN-on-Si expert ALLOS Semiconductors sold its high power electronics and RF business to AZUR SPACE

Joint press release: The leading provider of III-V epitaxy for solar cells AZUR SPACE and GaN-on-Si epiwafer expert ALLOS Semiconductors have announced that AZUR SPACE has acquired the electronics business of ALLOS Semiconductors. AZUR SPACE will use the acquired technology to expand its III-V epi business into the booming market for GaN-on-Si high power electronics and RF epiwafers. ALLOS Semiconductors will continue its optoelectronics business with the focus on the emerging micro LED display market.

Continue Reading →

硅基氮化镓专家ALLOS Semiconductors 将其大功率电子和射频业务出售给 AZUR SPACE

德国,海尔布隆和德累斯顿- 2020年7月8日- 光伏电池III-V族外延片供应商AZUR SPACE和硅基氮化镓外延片专家ALLOS Semiconductors 共同宣布, AZUR SPACE已收购ALLOS Semiconductors 的电子业务。AZUR SPACE将利用收购的技术将其III-V 族外延片业务扩展到蓬勃发展的硅基氮化镓高功率电子和射频外延片市场。ALLOS Semiconductors 将继续开展其光电子业务,并聚焦于新兴Micro LED显示屏市场。

Continue Reading →

GaN-on-Si-Experte ALLOS Semiconductors verkauft seine Geschäftsfelder für Leistungs- und Hochfrequenzelektronik an AZUR SPACE

Gemeinsame Presseerklärung: Der führende Anbieter von III-V-Epitaxie für Solarzellen, AZUR SPACE und der Experte für GaN-on-Si-Epiwafer, ALLOS Semiconductors geben bekannt, dass AZUR SPACE die Leistungs- und Hochfrequenzelektronik-Geschäftsfelder von ALLOS Semiconductors übernimmt. AZUR SPACE wird die erworbene Technologie nutzen, um sein III‑V‑Epitaxie-Geschäft auf den boomenden GaN-on-Si-Markt für Leistungselektronik und Hochfrequenzelektronik auszuweiten. ALLOS Semiconductors wird sein Optoelektronik-Geschäft mit Fokus auf dem wachsenden Markt für micro LED-Displays fortsetzen.

Continue Reading →

Alexander Loesing talks at EPIC’s online meeting on micro LED

ALLOS presented at the online meeting of EPIC about micro LED technology and applications. Watch the video of the talk.

Continue Reading →

Article at ST magazine: Enabling cost-competitive mass production of micro-LED displays

Semiconductor Today magazine invited ALLOS to share its vision how to enable the mass production of high-performant, low-cost, energy-efficient micro LED displays.

Continue Reading →

Bringing micro LEDs to the dimensions of the silicon industry with ALLOS’ 200 mm and 300 mm GaN-on-Si epiwafers

Press release: To address the wafer size mismatch and to tackle the yield challenge in micro LED production, ALLOS has applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers. Additionally the company reports about its success on the roadmap to 300 mm.

Continue Reading →

利用 ALLOS 的 200 mm 和 300 mm 硅基氮化镓外延片,将 microLED 应用于硅产业领域

德国德累斯顿 – 2020 年 3 月 30 日 – 为了解决晶片尺寸不匹配的问题并应对 microLED 生产产量方面的挑战,ALLOS 应用其独特的应变工程技术,展示了 200 mm 硅基氮化镓 (GaN-on-Si) 外延片的出色一致性和可重复性。此外,公司还报告了其 300 mm 外延片的成功发展蓝图。

Continue Reading →

High power electronics without carbon-doping and ALLOS’ strain-engineering approach for super uniformity and high-yield micro LED epiwafers

We have been very pleased to be invited again to present at the joint conference SSL China and IFWS. At IFWS we had the opportunity to talk about the benefits of our unique approach to avoid carbon-doping in GaN-on-Si for high power electronics and instead work to achieve extra-ordinary good crystal quality. During SSL China

Continue Reading →

Touch Taiwan: The right strategy to put micro LED epiwafers into mass production

Thank you, 謝謝, and herzlichen Dank to the Taiwan Display Union Association for the invitation to talk at Touch Taiwan‘s „International Micro LED Display Conference“ about the right strategy for LED epiwafers to bring micro LED displays into mass production. Among presenters and participants at the conference, we experienced a new openness to discuss the

Continue Reading →

ALLOS team celebrates five successful years

Today, five years ago, the founders of ALLOS went out to enable its customers to leapfrog the competition by tapping into the 11 years of track-record of GaN-on-Si pioneer AZZURRO Semiconductors by making the technology and patents available for license. To radically cut short the time needed to establish working GaN-on-Si processes, ALLOS transfers it

Continue Reading →