Dresden, Germany – 14th May 2019 – After winning already in 2018, the ALLOS team is particularly proud to have again been voted winner of the CS Award for material and substrates in 2019. This time ALLOS got the award for being the only company offering carbon-doping free GaN-on-Si epi-technology with all needed epiwafer characteristics
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Meet us at Display Week in San Jose and PCIM Nuremberg next month. For more information and constant updates please refer to our Meet ALLOS page.
In his analysis for Photonics Spectra, Hank Hogan looks at the challenges of micro LED manufacturing and solutions to overcome the challenges – including ALLOS’ proprietary and patented process for growing gallium nitride (GaN) on large diameter silicon (Si) substrates to address the cost – and with ALLOS’ technology – also the yield challenges. The
We did it again – ALLOS is nominated for the prestigious Compound Semiconductor Award for the fourth time in just five years since starting ALLOS! In 2018 we won this Award for achieving the world-record in vertical breakdown voltage with over 1,400 volt. This year we have been nominated again, this time for our GaN-on-Silicon
Press Release: Known for causing bad dynamic on-resistance, carbon-doping is uniquely avoided by ALLOS and data available from customers now confirmed not only outstanding wafer-level data but also excellent dynamic Ron and high temperature performance. In an invited talk at the E-MRS scientific conference in Warsaw ALLOS’ co-founder and CTO Dr. Atsushi Nishikawa showed this data and the underlining analysis.
Plainview, N.Y., Nov. 8, 2018—Veeco Instruments Inc. (Nasdaq: VECO) and ALLOS Semiconductors GmbH announced today the completion of another phase of their mutual effort to provide the industry with leading GaN-on-Silicon epiwafer technology for microLED production. The purpose of the companies’ most recent collaboration was to demonstrate the reproducibility of ALLOS’ 200 mm GaN-on-Si epiwafer
Veeco Instruments Inc. (Nasdaq: VECO) 与 ALLOS Semiconductors GmbH 今日宣布取得又一阶段的合作成果，双方共同努力，致力于为 microLED 生产应用提供业内领先的硅基氮化镓外延片产品技术。两家公司最近合作的宗旨是，在为全球范围内多家杰出的消费类电子产品公司生产外延片的同时，展示 ALLOS 200 mm 硅基氮化镓外延片产品技术在 Veeco Propel® MOCVD 反应器上的可复制性。
For the upcoming months ALLOS and its partners are invited to give talks at several major industry and scientific conferences around the globe. October 2018, SEMI Equipment and Manufacturing, Nanchang For October 24, 2018 ALLOS’ CEO Burkhard Slischka is invited by SEMI China to talk about “GaN-on-Si manufacturing for micro LED and High Power Electronics
Read a summary of the talk at he annual conference of the European Material Research Society.
LEDinside黄女士就即将到来的microLED市场采访了德国半导体技术公司ALLOS的首席执行官Burkhard Slischka先生。 在ALLOS看来，硅基氮化镓技术是实现成本控制和增加产量的关键推动因素。 为了证实这个观点，本次采访主要就外延片的均匀性、CMOS生产线的使用和300mm硅基氮化镓外延片的可行性以及LED氮化镓外延片分别以蓝宝石为衬底和硅为衬底时的性能比较这几个观点展开讨论。 您也可以点击这里阅读完整的访问。 LEDinside及其台湾市场新闻媒体Trendforce是LED产业与技术新闻最顶尖的汇集地。我们非常高兴能与他们的读者分享ALLOS就LED 产业未来的看法。这也显示了ALLOS对中国市场的信心和承诺。此外，请不惜赐教，如有疑问我们也很乐意回答您们提出的任何问题。 The English version of the interview you can find here.