“How can GaN-on-Si compete with SiC in the market for 1200 Volt devices?” – ALLOS presents at CS International conference in Brussels

ALLOS’ CEO Burkhard Slischka presented ALLOS’ latest developments on epiwafer technology for 1200 V power devices at this week’s CS International conference in Brussels. Beside record breakdown voltages on both vertical and lateral test setups, he also showed the very low trapping effects of the material, which are crucial to achieve good dynamic device performance.

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