ALLOS’ Dr. Nishikawa talks at SEMICON Japan about the physics and innovative techniques to improve the isolation of GaN-on-Si epiwafer

At this week’s SEMICON Japan industry exhibition ALLOS’ Atsushi Nishikawa was invited to talk about improvements in isolation of GaN-on-Si epiwafer for high-power device application. “It is a pleasure to talk in my home-country Japan” comments Nishikawa “In our opinion the power semiconductor industry needs to have a dialogue about how to achieve the required

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