ALLOS’ Dr. Nishikawa talks at SEMICON Japan about the physics and innovative techniques to improve the isolation of GaN-on-Si epiwafer

At this week’s SEMICON Japan industry exhibition ALLOS’ Atsushi Nishikawa was invited to talk about improvements in isolation of GaN-on-Si epiwafer for high-power device application. “It is a pleasure to talk in my home-country Japan” comments Nishikawa “In our opinion the power semiconductor industry needs to have a dialogue about how to achieve the required isolation of GaN-on-Si. The conventional wisdom today is to apply carbon doping. But this has negative side-effects on dynamic performance, crystal quality and possibly reliability. Here we showed our results on achieving very low leakage current, which as among the best in industry, by having non-doped, thick epilayers with high crystal quality. Another factor to improve the isolation is the number and careful placement of interlayers in the structure. After we showed first results already earlier this year at ICNS I am happy to have the opportunity to show further results now in Japan.”

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