Category Archives: News in English

Interview “Mighty Plans For Micro-LEDs” 

Compound Semiconductors magazine talked to ALLOS’ CMO Alexander Loesing. You can read the interview on CS’ site here.

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ALLOS and Prof. Ohkawa from KAUST are working on high efficiency nitride-based red LEDs on silicon

ALLOS Semiconductors has engaged in a collaboration with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) for realizing high efficiency nitride-based red LEDs on large diameter silicon substrates.

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GaN-on-Si expert ALLOS Semiconductors sold its high power electronics and RF business to AZUR SPACE

Joint press release: The leading provider of III-V epitaxy for solar cells AZUR SPACE and GaN-on-Si epiwafer expert ALLOS Semiconductors have announced that AZUR SPACE has acquired the electronics business of ALLOS Semiconductors. AZUR SPACE will use the acquired technology to expand its III-V epi business into the booming market for GaN-on-Si high power electronics and RF epiwafers. ALLOS Semiconductors will continue its optoelectronics business with the focus on the emerging micro LED display market.

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Alexander Loesing talks at EPIC’s online meeting on micro LED

ALLOS presented at the online meeting of EPIC about micro LED technology and applications. Watch the video of the talk.

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Article at ST magazine: Enabling cost-competitive mass production of micro-LED displays

Semiconductor Today magazine invited ALLOS to share its vision how to enable the mass production of high-performant, low-cost, energy-efficient micro LED displays.

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Bringing micro LEDs to the dimensions of the silicon industry with ALLOS’ 200 mm and 300 mm GaN-on-Si epiwafers

Press release: To address the wafer size mismatch and to tackle the yield challenge in micro LED production, ALLOS has applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers. Additionally the company reports about its success on the roadmap to 300 mm.

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High power electronics without carbon-doping and ALLOS’ strain-engineering approach for super uniformity and high-yield micro LED epiwafers

We have been very pleased to be invited again to present at the joint conference SSL China and IFWS. At IFWS we had the opportunity to talk about the benefits of our unique approach to avoid carbon-doping in GaN-on-Si for high power electronics and instead work to achieve extra-ordinary good crystal quality. During SSL China

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Touch Taiwan: The right strategy to put micro LED epiwafers into mass production

Thank you, 謝謝, and herzlichen Dank to the Taiwan Display Union Association for the invitation to talk at Touch Taiwan‘s „International Micro LED Display Conference“ about the right strategy for LED epiwafers to bring micro LED displays into mass production. Among presenters and participants at the conference, we experienced a new openness to discuss the

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ALLOS team celebrates five successful years

Today, five years ago, the founders of ALLOS went out to enable its customers to leapfrog the competition by tapping into the 11 years of track-record of GaN-on-Si pioneer AZZURRO Semiconductors by making the technology and patents available for license. To radically cut short the time needed to establish working GaN-on-Si processes, ALLOS transfers it

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ALLOS shows super uniform 200 mm micro LED epiwafer at SID Display Week

The team of ALLOS felt honored to have the privilege of discussing ALLOS’ technology for super uniform, high-yielding 200 mm GaN-on-Si at SID Display Week. Our thanks to SID for the invitation! We are delighted by the overwhelming feedback and inspired by the many fascinating prototypes and concepts for micro LEDs, which have been shown

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