Strasbourg, France – 28th July 2017 – At this week’s ICNS scientific conference ALLOS’ co-founder and CTO Dr. Atsushi Nishikawa discussed three common believes about GaN-on-Si: Firstly, that the usage of carbon would be inevitable, secondly that using interlayers in the buffer would be a source of leakage and thirdly that the choice of the
Category Archives: News in English
ALLOS Semiconductors’ co-founder and CMO Alexander Loesing was invited to talk about “Who will benefit from micro LEDs with new generation GaN-on-Si?” at last week’s LED industry event in Taiwan. After briefly looking at the challenges of using GaN-on-Si for conventional LEDs the presentation focused on the opportunities and challenges for the LED and silicon
Dresden, Germany – 16th February 2017 – The latest generation of ALLOS Semiconductors’ high crystal quality GaN-on-Si process achieves excellent isolation without doping. Applying this technology ALLOS recently concluded the development of customized epi structures with very low leakage for a power electronics customer. The epiwafer growth processes were established in this customer’s Aixtron G5
Based on a background talk with ALLOS’ CEO Burkhard Slischka and her own research Rebecca Pool of Compound Semiconductor magazine published an article named „All Eyes on ALLOS“. It looks at the latest GaN-on-silicon developments and ALLOS’ role in the industry. It is available free of charge on CS‘ website here (registration might be required).
Will Samsung transform and conquer the LED industry with disruptive GaN-on-Si technology? Compound Semiconductor magazine gave ALLOS the opportunity to comment on the situation. Read the article in today’s issue of CS magazine or download your copy here. Background: In the March issue of CS magazine Samsung published an article about its GaN-on-Si LED technology
Dresden, Germany – 11th April 2016 – ALLOS Semiconductors has transferred its latest generation GaN-on-Si epiwafer technology in less than twelve weeks to a major international industry player. This is part of a comprehensive joint project to accelerate the GaN-on-Si power semiconductor product development of that customer. ALLOS Semiconductors today announced the successful completion of
ALLOS was nominated for the 2016 Compound Semiconductor Industry Award to acknowledge its achievements in 150 and 200 mm GaN-on-Si epiwafer technology. In the Substrates & Materials Award category ALLOS finished among the top three candidates. The entire ALLOS team is very proud and would like to thank you all for your votes and support.
Hsinchu, Taiwan – 19th August 2015 – The 150 and 200 mm GaN-on-Si epiwafer technology transfer from ALLOS Semiconductors to Epistar was concluded in record time and with industry leading homogeneities and crystal quality. Epistar Corporation and ALLOS Semiconductors today announced the successful conclusion of their project to establish ALLOS’ mature 150 and 200 mm
Hsinchu, Taiwan – 11th March 2015 – Epistar licenced GaN-on-Si technology from ALLOS Semiconductors and concluded the first phases of the technology transfer successfully. Leading LED maker Epistar Corporation, Taiwan and the engineering and consulting company ALLOS Semiconductors, Germany announced today that Epistar licensed ALLOS’ unique gallium nitride on silicon (GaN-on-Si) technology and that the
Dresden, Germany – 15th December 2014 – GaN-on-Si technology expert ALLOS Semiconductors, founded little more than six months ago, announced today that it has acquired the exclusive ownership of all technology, know-how and intellectual property of former AZZURRO Semiconductors. ALLOS Semiconductors GmbH, who is specialised in GaN-on-Si technology and markets, provides engineering and consulting services