“The Right Strategy for Developing GaN Power Electronics” – ALLOS’ CEO Burkhard Slischka talks at SEMI China’s CPSIC 2017 conference in Nanjing
SEMI China invited ALLOS’ CEO Burkhard Slischka to talk about market entry strategies into GaN-on-Si for power electronics at this year’s CPSIC conference in Nanjing.
Starting between five to fifteen years ago, about ten pioneering companies have taken the lead in GaN-on-Si for high power electronics (HPE) and have successfully developed the technology. With the introduction of first commercial devices over the last two years this market has finally become a reality. Ambitious companies who now want to follow this leading group have to choose the right strategy for them to develop GaN power electronics successfully.
With ALLOS’ team coming from a background of having been in the GaN-on-Si epiwafer supply business before and now being in the GaN-on-Si technology licensing business, Slischka looked at four questions:
- Where is GaN-on-Si today?
- Who has successfully developed products, and why?
- What is the right strategy for fast followers?
- Make or buy your GaN-on-Si epiwafers?
You can download a copy of the presentation here.
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