ALLOS’ CTO is invited to give a lecture at Osaka University about history of GaN-on-Si development and its future
Thanks to Prof. Ryuji Katayama of Osaka University, ALLOS’ Atsushi Nishikawa is invited to give a lecture this week to undergraduate and graduate students at Osaka University about the history of GaN-on-Si technology and possible future development.
For ALLOS it remains important to engage with the academic community and to encourage students and young researchers to learn more about semiconductor physics, especially GaN-on-Si device physics and its applications. We remain available for universities, research institutes and industrial partners in educating about and discussing GaN-on-Si basics and recent technological progress.
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