Category Archives: News in English

ALLOS wins CS Award for the second year in a row

Dresden, Germany – 14th May 2019 – After winning already in 2018, the ALLOS team is particularly proud to have again been voted winner of the CS Award for material and substrates in 2019. This time ALLOS got the award for being the only company offering carbon-doping free GaN-on-Si epi-technology with all needed epiwafer characteristics

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Photonics Spectra discusses impact of micro LEDs on display industry

In his analysis for Photonics Spectra, Hank Hogan looks at the challenges of micro LED manufacturing and solutions to overcome the challenges – including ALLOS’ proprietary and patented process for growing gallium nitride (GaN) on large diameter silicon (Si) substrates to address the cost – and with ALLOS’ technology – also the yield challenges. The

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ALLOS is nominated for CS Award for the fourth time

We did it again – ALLOS is nominated for the prestigious Compound Semiconductor Award for the fourth time in just five years since starting ALLOS! In 2018 we won this Award for achieving the world-record in vertical breakdown voltage with over 1,400 volt. This year we have been nominated again, this time for our GaN-on-Silicon

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ALLOS’ customers confirm excellent dynamic Ron performance of carbon-doping free GaN-on-Si

Press Release: Known for causing bad dynamic on-resistance, carbon-doping is uniquely avoided by ALLOS and data available from customers now confirmed not only outstanding wafer-level data but also excellent dynamic Ron and high temperature performance. In an invited talk at the E-MRS scientific conference in Warsaw ALLOS’ co-founder and CTO Dr. Atsushi Nishikawa showed this data and the underlining analysis.

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VEECO and ALLOS technical collaboration acelerates the pace for 200 mm GaN-on-silicon micro LED applications for leading global customers

Plainview, N.Y., Nov. 8, 2018—Veeco Instruments Inc. (Nasdaq: VECO) and ALLOS Semiconductors GmbH announced today the completion of another phase of their mutual effort to provide the industry with leading GaN-on-Silicon epiwafer technology for microLED production. The purpose of the companies’ most recent collaboration was to demonstrate the reproducibility of ALLOS’ 200 mm GaN-on-Si epiwafer

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Dr. Nishikawa explains scientific background of ALLOS’ GaN-on-Si performance in invited talk at E-MRS conference

Read a summary of the talk at he annual conference of the European Material Research Society.

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LEDinside talks with ALLOS CEO about the future of micro LED

LEDinside’s Eva Huang interviewed ALLOS’ CEO Burkhard Slischka about the challenges for the upcoming micro LED market. ALLOS sees GaN-on-Si as a key enabler to achieve the needed cost and yield improvements. To underpin this, the interview covered key issues like wafer uniformity, the usage of CMOS lines, the possibility of 300 mm GaN-on-Si and

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“How can GaN-on-Si compete with SiC in the market for 1200 Volt devices?” – ALLOS presents at CS International conference in Brussels

ALLOS’ CEO Burkhard Slischka presented ALLOS’ latest developments on epiwafer technology for 1200 V power devices at this week’s CS International conference in Brussels. Beside record breakdown voltages on both vertical and lateral test setups, he also showed the very low trapping effects of the material, which are crucial to achieve good dynamic device performance.

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ALLOS wins prestigious CS Industry Award for Substrates and Materials 2018

A big surprise hit us this Friday and caused cheer and celebration in the ALLOS team: We won this year’s prestigious Compound Semiconductor Industry Award in the Substrates and Materials category. YES!

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IEMN shows more than 1400 V on ALLOS’ new GaN-on-Si epiwafer product

Joint press release: Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.

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