The Electronic Material Symposium held this week in Shiga, Japan organized a rump session titled ‘Does your research link with business?’ ALLOS’ CTO Dr. Atsushi Nishikawa, who was invited among other entrepreneurs in GaN and SiC devices, said “I enjoyed the fruitful discussion not only with young students and researchers but also with some of the legendary pioneers in GaN development here from Japan. We know that we owe the high level of today’s performance of ALLOS’ GaN-on-Si technology not only to our hard work but also to the big contributions and efforts made previously by other researchers. We respect this joint legacy a lot and I would like to express my gratitude!”
More information you can find of the website of the symposium here.
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