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ICNS 2017: ALLOS explains why carbon-doping is not needed to achieve high isolation in GaN-on-Si
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170725 ALLOS at ICNS – Low leakage without doping
2018-01-29
By
ALLOS Semiconductors
170725 ALLOS at ICNS - Low leakage without doping
170725 ALLOS at ICNS – Low leakage without doping
