法国阿斯克新城和德国德累斯顿 – 2018 年 2 月 1 日 – 来自电子、微电子及纳米技术研究院 (IEMN) 的最新结果显示，ALLOS 即将推出的适用于 1200 V 器件的硅基氮化镓外延片产品具有超过 1400 V 的纵向和横向击穿电压。 法国 IEMN 研究所的 Farid Medjdoub 博士领导的一支团队制造出了器件，并在由德国 ALLOS Semiconductors 公司提供的两款不同的硅基氮化镓外延片产品上进行了测量。其中之一是 ALLOS 即将推出的专为 1200 V 器件应用设计的产品的原型。IEMN 借助该外延片实现了超过 1400 V 的纵向和 1600 V 的横向（接地）击穿电压。另一款外延片是 ALLOS 针对 600 V 应用推出的成熟产品，同样显示出非常高的 1200 V 击穿电压以及更高的横向和纵向测量值。 适用于 1200 V 器件应用的新型外延片产品来自 ALLOS 正在进行的一项内部开发计划。该产品的强劲性能归功于一个创新的结构，该结构结合了 ALLOS
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法國阿斯克新城和德國德勒斯登– 2018 年 2 月 1 日 – 來自 IEMN 最新的結果顯示，ALLOS 即將推出用於 1200V 裝置的矽上氮化鎵磊晶圓產品，其崩潰電壓之縱向和橫向量測均超過 1400V。 由法國 IEMN 研究中心 Farid Medjdoub 博士所組成的研究團隊，運用了德國 ALLOS Semiconductors 所提供的兩種不同矽上氮化鎵磊晶圓來製作裝置並進行量測。其中之一是 ALLOS 即將推出，專為 1200V 裝置應用所設計的產品原型。IEMN 以這款磊晶圓，實現了縱向超過 1400V 和橫向（接地）超過 1600V 的擊穿。另一款磊晶圓是 ALLOS 針對 600V 應用的既有產品，其同樣顯示出非常高的 1200V 崩潰電壓以及更高的橫向和縱向量測。 用於 1200V 裝置應用的新磊晶圓產品來自 ALLOS 正在進行中的內部開發計畫。其強大的效能源自於創新的結構，結合 ALLOS 獨特的應變工程和高結晶品質方法，採取其他措施來抑制漏電並進一步增強崩潰電壓。這是在不影響其他重要參數（像是結晶品質和晶圓弓形度）以及不導入碳摻雜的情況下實現。Epi 生長係在標準的 Aixtron G5 MOCVD 反應器上進行。 在 2017 年 11
31.01.2018 In today’s article “Must Read: Worldwide Micro LED R&D Progress” LEDinside is highlighting ALLOS’ progress in demonstrating uniform 200 mm GaN-on-Si epiwafer for blue and gree micro LEDs. Read the article on LEDinsides website.
Yole Développement has today published an interview titled “ALLOS-Veeco collaboration enables better GaN-on-silicon microLEDs” with Alexander Loesing, CMO of ALLOS, and Christopher Morath, senior director, strategic marketing at Veeco. Content of the interview is to explain the collaboration between Veeco and ALLOS, what it offers to microLED manufacturing and the possible applications of GaN-on-silicon for
At this week’s SEMICON Japan industry exhibition ALLOS’ Atsushi Nishikawa was invited to talk about improvements in isolation of GaN-on-Si epiwafer for high-power device application. “It is a pleasure to talk in my home-country Japan” comments Nishikawa “In our opinion the power semiconductor industry needs to have a dialogue about how to achieve the required
It was a great honor and pleasure for our CMO, Alexander Loesing to be invited to present ALLOS’ latest results on micro LED and meet so many of China’s and international micro LED players – as well as the heavyweights from the local and international display industry. Alexander enjoyed the open discussion about the technical
Thank you to the Huawei team for inviting ALLOS’ Burkhard Slischka to speak about micro LED display manufacturing challenges at Huawei‘s internal ‘Material Forum’ conference in Munich. We enjoyed the outstanding presentations, the very interactive format and in-depth discussions with the high-level attendees. Thank you for the positive and valuable feedback! You can download a
The Electronic Material Symposium held this week in Shiga, Japan organized a rump session titled ‘Does your research link with business?’ ALLOS’ CTO Dr. Atsushi Nishikawa, who was invited among other entrepreneurs in GaN and SiC devices, said “I enjoyed the fruitful discussion not only with young students and researchers but also with some of
ALLOS’ CEO Burkhard Slischka talks at SSL 2017 conference in Beijing Recently, micro LED displays have attracted tremendous attention due to reduction of energy consumption and better display quality compared with conventional TFT-LCD or OLED displays. While in conventional LED making GaN-on-sapphire has the biggest market share for blue and green LED chips in
Plainview, N.Y., November 1, 2017 – Veeco Instruments Inc. (Nasdaq: VECO) announced today the completion of a strategic initiative with ALLOS Semiconductors (ALLOS) to demonstrate 200mm GaN-on-Si wafers for Blue/Green micro-LED production. Veeco teamed up with ALLOS to transfer their proprietary epitaxy technology onto the Propel® Single-Wafer MOCVD System to enable micro-LED production on existing
