Plainview，N.Y.，2017年11月1日 – Veeco Instruments Inc.（Nasdaq：VECO）今天宣布與ALLOS Semiconductors（ALLOS）完成一項戰略措施，以展示200mm 矽基板用於氮化鎵藍/綠光Micro-LED的生產上。 Veeco與ALLOS合作將其專有的磊晶技術轉移到Propel® Single-Wafer MOCVD系統上，以便於現有的矽生產線上實現生產Micro-LED。
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Blog Archives
SEMI China invited ALLOS’ CEO Burkhard Slischka to talk about market entry strategies into GaN-on-Si for power electronics at this year’s CPSIC conference in Nanjing.
Thanks to Prof. Ryuji Katayama of Osaka University, ALLOS’ Atsushi Nishikawa is invited to give a lecture this week to undergraduate and graduate students at Osaka University about the history of GaN-on-Si technology and possible future development. For ALLOS it remains important to engage with the academic community and to encourage students and young researchers
Strasbourg, France – 28th July 2017 – At this week’s ICNS scientific conference ALLOS’ co-founder and CTO Dr. Atsushi Nishikawa discussed three common believes about GaN-on-Si: Firstly, that the usage of carbon would be inevitable, secondly that using interlayers in the buffer would be a source of leakage and thirdly that the choice of the
ALLOS Semiconductors’ co-founder and CMO Alexander Loesing was invited to talk about “Who will benefit from micro LEDs with new generation GaN-on-Si?” at last week’s LED industry event in Taiwan. After briefly looking at the challenges of using GaN-on-Si for conventional LEDs the presentation focused on the opportunities and challenges for the LED and silicon
Dresden, Germany – 16th February 2017 – The latest generation of ALLOS Semiconductors’ high crystal quality GaN-on-Si process achieves excellent isolation without doping. Applying this technology ALLOS recently concluded the development of customized epi structures with very low leakage for a power electronics customer. The epiwafer growth processes were established in this customer’s Aixtron G5
Based on a background talk with ALLOS’ CEO Burkhard Slischka and her own research Rebecca Pool of Compound Semiconductor magazine published an article named „All Eyes on ALLOS“. It looks at the latest GaN-on-silicon developments and ALLOS’ role in the industry. It is available free of charge on CS‘ website here (registration might be required).
Will Samsung transform and conquer the LED industry with disruptive GaN-on-Si technology? Compound Semiconductor magazine gave ALLOS the opportunity to comment on the situation. Read the article in today’s issue of CS magazine or download your copy here. Background: In the March issue of CS magazine Samsung published an article about its GaN-on-Si LED
Dresden, Germany – 11th April 2016 – ALLOS Semiconductors has transferred its latest generation GaN-on-Si epiwafer technology in less than twelve weeks to a major international industry player. This is part of a comprehensive joint project to accelerate the GaN-on-Si power semiconductor product development of that customer. ALLOS Semiconductors today announced the successful completion of
ALLOS was nominated for the 2016 Compound Semiconductor Industry Award to acknowledge its achievements in 150 and 200 mm GaN-on-Si epiwafer technology. In the Substrates & Materials Award category ALLOS finished among the top three candidates. The entire ALLOS team is very proud and would like to thank you all for your votes and support.
