Blog Archives

Touch Taiwan: The right strategy to put micro LED epiwafers into mass production

Thank you, 謝謝, and herzlichen Dank to the Taiwan Display Union Association for the invitation to talk at Touch Taiwan‘s „International Micro LED Display Conference“ about the right strategy for LED epiwafers to bring micro LED displays into mass production. Among presenters and participants at the conference, we experienced a new openness to discuss the

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ALLOS team celebrates five successful years

Today, five years ago, the founders of ALLOS went out to enable its customers to leapfrog the competition by tapping into the 11 years of track-record of GaN-on-Si pioneer AZZURRO Semiconductors by making the technology and patents available for license. To radically cut short the time needed to establish working GaN-on-Si processes, ALLOS transfers it

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ALLOS shows super uniform 200 mm micro LED epiwafer at SID Display Week

The team of ALLOS felt honored to have the privilege of discussing ALLOS’ technology for super uniform, high-yielding 200 mm GaN-on-Si at SID Display Week. Our thanks to SID for the invitation! We are delighted by the overwhelming feedback and inspired by the many fascinating prototypes and concepts for micro LEDs, which have been shown

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ALLOS wins CS Award for the second year in a row

Dresden, Germany – 14th May 2019 – After winning already in 2018, the ALLOS team is particularly proud to have again been voted winner of the CS Award for material and substrates in 2019. This time ALLOS got the award for being the only company offering carbon-doping free GaN-on-Si epi-technology with all needed epiwafer characteristics

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Update: Meet ALLOS at these industry events in May 2019

Meet us at Display Week in San Jose and PCIM Nuremberg next month. For more information and constant updates please refer to our Meet ALLOS page.

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Photonics Spectra discusses impact of micro LEDs on display industry

In his analysis for Photonics Spectra, Hank Hogan looks at the challenges of micro LED manufacturing and solutions to overcome the challenges – including ALLOS’ proprietary and patented process for growing gallium nitride (GaN) on large diameter silicon (Si) substrates to address the cost – and with ALLOS’ technology – also the yield challenges. The

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ALLOS is nominated for CS Award for the fourth time

We did it again – ALLOS is nominated for the prestigious Compound Semiconductor Award for the fourth time in just five years since starting ALLOS! In 2018 we won this Award for achieving the world-record in vertical breakdown voltage with over 1,400 volt. This year we have been nominated again, this time for our GaN-on-Silicon

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ALLOS’ customers confirm excellent dynamic Ron performance of carbon-doping free GaN-on-Si

Press Release: Known for causing bad dynamic on-resistance, carbon-doping is uniquely avoided by ALLOS and data available from customers now confirmed not only outstanding wafer-level data but also excellent dynamic Ron and high temperature performance. In an invited talk at the E-MRS scientific conference in Warsaw ALLOS’ co-founder and CTO Dr. Atsushi Nishikawa showed this data and the underlining analysis.

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VEECO and ALLOS technical collaboration acelerates the pace for 200 mm GaN-on-silicon micro LED applications for leading global customers

Plainview, N.Y., Nov. 8, 2018—Veeco Instruments Inc. (Nasdaq: VECO) and ALLOS Semiconductors GmbH announced today the completion of another phase of their mutual effort to provide the industry with leading GaN-on-Silicon epiwafer technology for microLED production. The purpose of the companies’ most recent collaboration was to demonstrate the reproducibility of ALLOS’ 200 mm GaN-on-Si epiwafer

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Veeco 与 ALLOS 以技术合作加快为全球主要客户提供 200 mm 硅基氮化镓 microLED 应用

Veeco Instruments Inc. (Nasdaq: VECO) 与 ALLOS Semiconductors GmbH 今日宣布取得又一阶段的合作成果,双方共同努力,致力于为 microLED 生产应用提供业内领先的硅基氮化镓外延片产品技术。两家公司最近合作的宗旨是,在为全球范围内多家杰出的消费类电子产品公司生产外延片的同时,展示 ALLOS 200 mm 硅基氮化镓外延片产品技术在 Veeco Propel® MOCVD 反应器上的可复制性。

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