Blog Archives

GaN-on-Si-Experte ALLOS Semiconductors verkauft seine Geschäftsfelder für Leistungs- und Hochfrequenzelektronik an AZUR SPACE

Gemeinsame Presseerklärung: Der führende Anbieter von III-V-Epitaxie für Solarzellen, AZUR SPACE und der Experte für GaN-on-Si-Epiwafer, ALLOS Semiconductors geben bekannt, dass AZUR SPACE die Leistungs- und Hochfrequenzelektronik-Geschäftsfelder von ALLOS Semiconductors übernimmt. AZUR SPACE wird die erworbene Technologie nutzen, um sein III‑V‑Epitaxie-Geschäft auf den boomenden GaN-on-Si-Markt für Leistungselektronik und Hochfrequenzelektronik auszuweiten. ALLOS Semiconductors wird sein Optoelektronik-Geschäft mit Fokus auf dem wachsenden Markt für micro LED-Displays fortsetzen.

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Alexander Loesing talks at EPIC’s online meeting on micro LED

ALLOS presented at the online meeting of EPIC about micro LED technology and applications. Watch the video of the talk.

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Article at ST magazine: Enabling cost-competitive mass production of micro-LED displays

Semiconductor Today magazine invited ALLOS to share its vision how to enable the mass production of high-performant, low-cost, energy-efficient micro LED displays.

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Bringing micro LEDs to the dimensions of the silicon industry with ALLOS’ 200 mm and 300 mm GaN-on-Si epiwafers

Press release: To address the wafer size mismatch and to tackle the yield challenge in micro LED production, ALLOS has applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers. Additionally the company reports about its success on the roadmap to 300 mm.

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利用 ALLOS 的 200 mm 和 300 mm 硅基氮化镓外延片,将 microLED 应用于硅基半导体产业

德国德累斯顿 – 2020 年 3 月 30 日 – 为了解决晶片尺寸不匹配的问题并应对 microLED 生产产量方面的挑战,ALLOS 应用其独特的应变工程技术,展示了 200 mm 硅基氮化镓 (GaN-on-Si) 外延片的出色一致性和可重复性。此外,公司还报告了其 300 mm 外延片的成功发展蓝图。

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High power electronics without carbon-doping and ALLOS’ strain-engineering approach for super uniformity and high-yield micro LED epiwafers

We have been very pleased to be invited again to present at the joint conference SSL China and IFWS. At IFWS we had the opportunity to talk about the benefits of our unique approach to avoid carbon-doping in GaN-on-Si for high power electronics and instead work to achieve extra-ordinary good crystal quality. During SSL China

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Touch Taiwan: The right strategy to put micro LED epiwafers into mass production

Thank you, 謝謝, and herzlichen Dank to the Taiwan Display Union Association for the invitation to talk at Touch Taiwan‘s „International Micro LED Display Conference“ about the right strategy for LED epiwafers to bring micro LED displays into mass production. Among presenters and participants at the conference, we experienced a new openness to discuss the

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ALLOS team celebrates five successful years

Today, five years ago, the founders of ALLOS went out to enable its customers to leapfrog the competition by tapping into the 11 years of track-record of GaN-on-Si pioneer AZZURRO Semiconductors by making the technology and patents available for license. To radically cut short the time needed to establish working GaN-on-Si processes, ALLOS transfers it

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ALLOS shows super uniform 200 mm micro LED epiwafer at SID Display Week

The team of ALLOS felt honored to have the privilege of discussing ALLOS’ technology for super uniform, high-yielding 200 mm GaN-on-Si at SID Display Week. Our thanks to SID for the invitation! We are delighted by the overwhelming feedback and inspired by the many fascinating prototypes and concepts for micro LEDs, which have been shown

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ALLOS wins CS Award for the second year in a row

Dresden, Germany – 14th May 2019 – After winning already in 2018, the ALLOS team is particularly proud to have again been voted winner of the CS Award for material and substrates in 2019. This time ALLOS got the award for being the only company offering carbon-doping free GaN-on-Si epi-technology with all needed epiwafer characteristics

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