Blog Archives

IEMN 结果显示 ALLOS 新型硅基氮化镓外延片产品具有超过 1400 V 的击穿电压

法国阿斯克新城和德国德累斯顿 – 2018 年 2 月 1 日 – 来自电子、微电子及纳米技术研究院 (IEMN) 的最新结果显示,ALLOS 即将推出的适用于 1200 V 器件的硅基氮化镓外延片产品具有超过 1400 V 的纵向和横向击穿电压。

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IEMN 顯示在 ALLOS 的新矽上氮化鎵磊晶圓上超過 1400V 的電壓

法國阿斯克新城和德國德勒斯登– 2018 年 2 月 1 日 – 來自 IEMN 最新的結果顯示,ALLOS 即將推出用於 1200V 裝置的矽上氮化鎵磊晶圓產品,其崩潰電壓之縱向和橫向量測均超過 1400V。

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ALLOS’ Technology Progress is Highlighted by LEDinside Article

In today’s article “Must Read: Worldwide Micro LED R&D Progress” LEDinside is highlighting ALLOS’ progress in demonstrating uniform 200 mm GaN-on-Si epiwafer for blue and gree micro LEDs. Read the article on LEDinsides website.

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Interview of i-Micronews with Veeco’s Christopher Morath and ALLOS’ Alexander Loesing

Yole Développement has today published an interview titled “ALLOS-Veeco collaboration enables better GaN-on-silicon microLEDs” with Alexander Loesing, CMO of ALLOS, and Christopher Morath, senior director, strategic marketing at Veeco. Content of the interview is to explain the collaboration between Veeco and ALLOS, what it offers to microLED manufacturing and the possible applications of GaN-on-silicon for

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ALLOS’ Dr. Nishikawa talks at SEMICON Japan about the physics and innovative techniques to improve the isolation of GaN-on-Si epiwafer

At this week’s SEMICON Japan industry exhibition ALLOS’ Atsushi Nishikawa was invited to talk about improvements in isolation of GaN-on-Si epiwafer for high-power device application. “It is a pleasure to talk in my home-country Japan” comments Nishikawa “In our opinion the power semiconductor industry needs to have a dialogue about how to achieve the required

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Invitation to present at 1st China International Micro-LED Display Summit in Nanjing

It was a great honor and pleasure for our CMO, Alexander Loesing to be invited to present ALLOS’ latest results on micro LED and meet so many of China’s and international micro LED players – as well as the heavyweights from the local and international display industry. Alexander enjoyed the open discussion about the technical

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ALLOS speaks at Huawei’s internal ‘Material Forum’ about micro LED display manufacturing challenges

Thank you to the Huawei team for inviting ALLOS’ Burkhard Slischka to speak about micro LED display manufacturing challenges at Huawei‘s internal ‘Material Forum’ conference in Munich. We enjoyed the outstanding presentations, the very interactive format and in-depth discussions with the high-level attendees. Thank you for the positive and valuable feedback! You can download a

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ALLOS’ CTO was panelist at Electronic Material Symposium in Japan

The Electronic Material Symposium held this week in Shiga, Japan organized a rump session titled ‘Does your research link with business?’ ALLOS’ CTO Dr. Atsushi Nishikawa, who was invited among other entrepreneurs in GaN and SiC devices, said “I enjoyed the fruitful discussion not only with young students and researchers but also with some of

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SSL 2017 Beijing: ALLOS unique interlayer design enables strain-free and large-diameter epiwafers without bow and cracks

ALLOS’ CEO Burkhard Slischka talks about ALLOS micro LED strategy at SSL 2017 conference in Beijing

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VEECO and ALLOS Demonstrate Industry-leading 200 mm GaN-on-Si Performance to enable Micro-LED Adoption

Plainview, N.Y., November 1, 2017 – Veeco Instruments Inc. (Nasdaq: VECO) announced today the completion of a strategic initiative with ALLOS Semiconductors (ALLOS) to demonstrate 200mm GaN-on-Si wafers for Blue/Green micro-LED production. Veeco teamed up with ALLOS to transfer their proprietary epitaxy technology onto the Propel® Single-Wafer MOCVD System to enable micro-LED production on existing

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