Blog Archives

Meet ALLOS’ speakers at upcoming conferences

For the upcoming months ALLOS and its partners are invited to give talks at several major industry and scientific conferences around the globe. October 2018, SEMI Equipment and Manufacturing, Nanchang For October 24, 2018 ALLOS’ CEO Burkhard Slischka is invited by SEMI China to talk about “GaN-on-Si manufacturing for micro LED and High Power Electronics

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Dr. Nishikawa explains scientific background of ALLOS’ GaN-on-Si performance in invited talk at E-MRS conference

Read a summary of the talk at he annual conference of the European Material Research Society.

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LEDinside与德国ALLOS的CEO就microLED的未来前景展开交流

LEDinside黄女士就即将到来的microLED市场采访了德国半导体技术公司ALLOS的首席执行官Burkhard Slischka先生。 在ALLOS看来,硅基氮化镓技术是实现成本控制和增加产量的关键推动因素。 为了证实这个观点,本次采访主要就外延片的均匀性、CMOS生产线的使用和300mm硅基氮化镓外延片的可行性以及LED氮化镓外延片分别以蓝宝石为衬底和硅为衬底时的性能比较这几个观点展开讨论。 您也可以点击这里阅读完整的访问。 LEDinside及其台湾市场新闻媒体Trendforce是LED产业与技术新闻最顶尖的汇集地。我们非常高兴能与他们的读者分享ALLOS就LED 产业未来的看法。这也显示了ALLOS对中国市场的信心和承诺。此外,请不惜赐教,如有疑问我们也很乐意回答您们提出的任何问题。 The English version of the interview you can find here.

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LEDinside talks with ALLOS CEO about the future of micro LED

LEDinside’s Eva Huang interviewed ALLOS’ CEO Burkhard Slischka about the challenges for the upcoming micro LED market. ALLOS sees GaN-on-Si as a key enabler to achieve the needed cost and yield improvements. To underpin this, the interview covered key issues like wafer uniformity, the usage of CMOS lines, the possibility of 300 mm GaN-on-Si and

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“How can GaN-on-Si compete with SiC in the market for 1200 Volt devices?” – ALLOS presents at CS International conference in Brussels

ALLOS’ CEO Burkhard Slischka presented ALLOS’ latest developments on epiwafer technology for 1200 V power devices at this week’s CS International conference in Brussels. Beside record breakdown voltages on both vertical and lateral test setups, he also showed the very low trapping effects of the material, which are crucial to achieve good dynamic device performance.

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ALLOS wins prestigious CS Industry Award for Substrates and Materials 2018

A big surprise hit us this Friday and caused cheer and celebration in the ALLOS team: We won this year’s prestigious Compound Semiconductor Industry Award in the Substrates and Materials category. YES!

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IEMN shows more than 1400 V on ALLOS’ new GaN-on-Si epiwafer product

Joint press release: Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.

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IEMN 结果显示 ALLOS 新型硅基氮化镓外延片产品具有超过 1400 V 的击穿电压

法国阿斯克新城和德国德累斯顿 – 2018 年 2 月 1 日 – 来自电子、微电子及纳米技术研究院 (IEMN) 的最新结果显示,ALLOS 即将推出的适用于 1200 V 器件的硅基氮化镓外延片产品具有超过 1400 V 的纵向和横向击穿电压。

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IEMN 顯示在 ALLOS 的新矽上氮化鎵磊晶圓上超過 1400V 的電壓

法國阿斯克新城和德國德勒斯登– 2018 年 2 月 1 日 – 來自 IEMN 最新的結果顯示,ALLOS 即將推出用於 1200V 裝置的矽上氮化鎵磊晶圓產品,其崩潰電壓之縱向和橫向量測均超過 1400V。

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ALLOS’ Technology Progress is Highlighted by LEDinside Article

In today’s article “Must Read: Worldwide Micro LED R&D Progress” LEDinside is highlighting ALLOS’ progress in demonstrating uniform 200 mm GaN-on-Si epiwafer for blue and gree micro LEDs. Read the article on LEDinsides website.

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