News

Bringing micro LEDs to the dimensions of the silicon industry with ALLOS’ 200 mm and 300 mm GaN-on-Si epiwafers

Dresden, Germany – 30th March 2020 – To address the wafer size mismatch and to tackle the yield challenge in micro LED production, ALLOS has applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers. Additionally the company reports about its success on the roadmap to 300 mm. Yield plays

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利用 ALLOS 的 200 mm 和 300 mm 硅基氮化镓外延片,将 microLED 应用于硅产业领域

德国德累斯顿 – 2020 年 3 月 30 日 – 为了解决晶片尺寸不匹配的问题并应对 microLED 生产产量方面的挑战,ALLOS 应用其独特的应变工程技术,展示了 200 mm 硅基氮化镓 (GaN-on-Si) 外延片的出色一致性和可重复性。此外,公司还报告了其 300 mm 外延片的成功发展蓝图。 产量对于 microLED 显示器的成功起着至关重要的作用。它会直接影响生产的复杂性和成本。为了降低所需的成本,必须采用大晶片直径。这对于 microLED 应用而言尤其如此,它将来自 CMOS 生产线的晶片与 LED 外延片集成(如通过粘合)。对比蓝宝石基氮化镓 (GaN-on-sapphire) 实现的更小直径,匹配的晶片直径甚至还起到了促进作用。ALLOS 团队已采用其独有的应变工程技术来进一步提高波长一致性,并于 2019 年 2 月在 Veeco 的 Propel 产品上展示了 200 mm 的 GaN-on-Si LED 外延片,标准差 (STDEV) 低至 0.6 nm。 ALLOS 的最新研究结果表明,该技术现具有出色的可复制性,200 mm 的波长一致性始终低于

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High power electronics without carbon-doping and ALLOS’ strain-engineering approach for super uniformity and high-yield micro LED epiwafers

We have been very pleased to be invited again to present at the joint conference SSL China and IFWS. At IFWS we had the opportunity to talk about the benefits of our unique approach to avoid carbon-doping in GaN-on-Si for high power electronics and instead work to achieve extra-ordinary good crystal quality. During SSL China

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Touch Taiwan: The right strategy to put micro LED epiwafers into mass production

Thank you, 謝謝, and herzlichen Dank to the Taiwan Display Union Association for the invitation to talk at Touch Taiwan‘s „International Micro LED Display Conference“ about the right strategy for LED epiwafers to bring micro LED displays into mass production. Among presenters and participants at the conference, we experienced a new openness to discuss the

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ALLOS team celebrates five successful years

Today, five years ago, the founders of ALLOS went out to enable its customers to leapfrog the competition by tapping into the 11 years of track-record of GaN-on-Si pioneer AZZURRO Semiconductors by making the technology and patents available for license. To radically cut short the time needed to establish working GaN-on-Si processes, ALLOS transfers it

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ALLOS shows super uniform 200 mm micro LED epiwafer at SID Display Week

The team of ALLOS felt honored to have the privilege of discussing ALLOS’ technology for super uniform, high-yielding 200 mm GaN-on-Si at SID Display Week. Our thanks to SID for the invitation! We are delighted by the overwhelming feedback and inspired by the many fascinating prototypes and concepts for micro LEDs, which have been shown

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ALLOS wins CS Award for the second year in a row

Dresden, Germany – 14th May 2019 – After winning already in 2018, the ALLOS team is particularly proud to have again been voted winner of the CS Award for material and substrates in 2019. This time ALLOS got the award for being the only company offering carbon-doping free GaN-on-Si epi-technology with all needed epiwafer characteristics

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Update: Meet ALLOS at these industry events in May 2019

Meet us at Display Week in San Jose and PCIM Nuremberg next month. For more information and constant updates please refer to our Meet ALLOS page.

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Photonics Spectra discusses impact of micro LEDs on display industry

In his analysis for Photonics Spectra, Hank Hogan looks at the challenges of micro LED manufacturing and solutions to overcome the challenges – including ALLOS’ proprietary and patented process for growing gallium nitride (GaN) on large diameter silicon (Si) substrates to address the cost – and with ALLOS’ technology – also the yield challenges. The

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ALLOS is nominated for CS Award for the fourth time

We did it again – ALLOS is nominated for the prestigious Compound Semiconductor Award for the fourth time in just five years since starting ALLOS! In 2018 we won this Award for achieving the world-record in vertical breakdown voltage with over 1,400 volt. This year we have been nominated again, this time for our GaN-on-Silicon

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