News

Veeco and ALLOS technical collaboration accelerates the pace for 200 mm GaN-on-silicon micro LED applications for leading global customers

Plainview, N.Y., Nov. 8, 2018—Veeco Instruments Inc. (Nasdaq: VECO) and ALLOS Semiconductors GmbH announced today the completion of another phase of their mutual effort to provide the industry with leading GaN-on-Silicon epiwafer technology for microLED production. The purpose of the companies’ most recent collaboration was to demonstrate the reproducibility of ALLOS’ 200 mm GaN-on-Si epiwafer

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Veeco 与 ALLOS 以技术合作加快为全球主要客户提供 200 mm 硅基氮化镓 microLED 应用

纽约普莱恩维尤 – 2018 年 11 月 8 日 – Veeco Instruments Inc. (Nasdaq: VECO) 与 ALLOS Semiconductors GmbH 今日宣布取得又一阶段的合作成果,双方共同努力,致力于为 microLED 生产应用提供业内领先的硅基氮化镓外延片产品技术。两家公司最近合作的宗旨是,在为全球范围内多家杰出的消费类电子产品公司生产外延片的同时,展示 ALLOS 200 mm 硅基氮化镓外延片产品技术在 Veeco Propel® MOCVD 反应器上的可复制性。

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Meet ALLOS’ speakers at upcoming conferences 2018 and 2019

For the upcoming months ALLOS and its partners are invited to give talks at several major industry and scientific conferences around the globe.

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Dr. Nishikawa explains scientific background of ALLOS’ GaN-on-Si performance in invited talk at E-MRS conference

In an invited talk at the annual conference of the European Material Research Society (E-MRS) in Warsaw ALLOS’ CTO Dr. Atsushi Nishikawa explained the scientific background of how ALLOS’ GaN-on-Si technology for High Power Electronics (HPE) achieves excellent isolation and dynamic performance by using high crystal quality GaN and no carbon doping.

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LEDinside与德国ALLOS的CEO就microLED的未来前景展开交流

LEDinside黄女士就即将到来的microLED市场采访了德国半导体技术公司ALLOS的首席执行官Burkhard Slischka先生。 在ALLOS看来,硅基氮化镓技术是实现成本控制和增加产量的关键推动因素。 为了证实这个观点,本次采访主要就外延片的均匀性、CMOS生产线的使用和300mm硅基氮化镓外延片的可行性以及LED氮化镓外延片分别以蓝宝石为衬底和硅为衬底时的性能比较这几个观点展开讨论。 您也可以点击这里阅读完整的访问。 LEDinside及其台湾市场新闻媒体Trendforce是LED产业与技术新闻最顶尖的汇集地。我们非常高兴能与他们的读者分享ALLOS就LED 产业未来的看法。这也显示了ALLOS对中国市场的信心和承诺。此外,请不惜赐教,如有疑问我们也很乐意回答您们提出的任何问题。 The English version of the interview you can find here.

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LEDinside talks with ALLOS CEO about the future of micro LED

LEDinside’s Eva Huang interviewed ALLOS’ CEO Burkhard Slischka about the challenges for the upcoming micro LED market. ALLOS sees GaN-on-Si as a key enabler to achieve the needed cost and yield improvements. To underpin this, the interview covered key issues like wafer uniformity, the usage of CMOS lines, the possibility of 300 mm GaN-on-Si and

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“How can GaN-on-Si compete with SiC in the market for 1200 Volt devices?” – ALLOS presents at CS International conference in Brussels

ALLOS’ CEO Burkhard Slischka presented ALLOS’ latest developments on epiwafer technology for 1200 V power devices at this week’s CS International conference in Brussels. Beside record breakdown voltages on both vertical and lateral test setups, he also showed the very low trapping effects of the material, which are crucial to achieve good dynamic device performance.

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ALLOS wins prestigious CS Industry Award for Substrates and Materials 2018

A big surprise hit us this Friday and caused cheer and celebration in the ALLOS team: We won this year’s prestigious Compound Semiconductor Industry Award in the Substrates and Materials category. YES!

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IEMN shows more than 1400 V on ALLOS’ new GaN-on-Si epiwafer product

Villeneuve-d’Ascq, France and Dresden, Germany – 1st February 2018 – Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.    A team around Dr. Farid Medjdoub from IEMN research institute in France has made devices and conducted

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IEMN 结果显示 ALLOS 新型硅基氮化镓外延片产品具有超过 1400 V 的击穿电压

法国阿斯克新城和德国德累斯顿 – 2018 年 2 月 1 日 – 来自电子、微电子及纳米技术研究院 (IEMN) 的最新结果显示,ALLOS 即将推出的适用于 1200 V 器件的硅基氮化镓外延片产品具有超过 1400 V 的纵向和横向击穿电压。  法国 IEMN 研究所的 Farid Medjdoub 博士领导的一支团队制造出了器件,并在由德国 ALLOS Semiconductors 公司提供的两款不同的硅基氮化镓外延片产品上进行了测量。其中之一是 ALLOS 即将推出的专为 1200 V 器件应用设计的产品的原型。IEMN 借助该外延片实现了超过 1400 V 的纵向和 1600 V 的横向(接地)击穿电压。另一款外延片是 ALLOS 针对 600 V 应用推出的成熟产品,同样显示出非常高的 1200 V 击穿电压以及更高的横向和纵向测量值。 适用于 1200 V 器件应用的新型外延片产品来自 ALLOS 正在进行的一项内部开发计划。该产品的强劲性能归功于一个创新的结构,该结构结合了 ALLOS

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