News

VEECO and ALLOS Demonstrate Industry-leading 200 mm GaN-on-Si Performance to enable Micro-LED Adoption

Plainview, N.Y., November 1, 2017 – Veeco Instruments Inc. (Nasdaq: VECO) announced today the completion of a strategic initiative with ALLOS Semiconductors (ALLOS) to demonstrate 200mm GaN-on-Si wafers for Blue/Green micro-LED production. Veeco teamed up with ALLOS to transfer their proprietary epitaxy technology onto the Propel® Single-Wafer MOCVD System to enable micro-LED production on existing

Continue Reading →

维易科(VEECO)和ALLOS展示行业领先的200MM硅基氮化镓性能,推动micro-LED的应用

纽约普莱恩维尤(Plainview),2017年11月1日– Veeco 公司 (Nasdaq: VECO)今日宣布和ALLOS Semiconductors (ALLOS)达成了一项战略举措,展示了200mm硅基氮化镓晶圆用于蓝/绿光micro-LED的生产。维易科和ALLOS合作将其专有外延技术转移到Propel® 单晶圆MOCVD系统,从而在现有的硅生产线上实现生产micro-LED。

Continue Reading →

VEECO和ALLOS演示業界領先的200MM GAN-ON-SILICON性能來實現MICRO-LED的應用

Plainview,N.Y.,2017年11月1日 – Veeco Instruments Inc.(Nasdaq:VECO)今天宣布與ALLOS Semiconductors(ALLOS)完成一項戰略措施,以展示200mm 矽基板用於氮化鎵藍/綠光Micro-LED的生產上。 Veeco與ALLOS合作將其專有的磊晶技術轉移到Propel® Single-Wafer MOCVD系統上,以便於現有的矽生產線上實現生產Micro-LED。

Continue Reading →

“The Right Strategy for Developing GaN Power Electronics” – ALLOS’ CEO Burkhard Slischka talks at SEMI China’s CPSIC 2017 conference in Nanjing

SEMI China invited ALLOS’ CEO Burkhard Slischka to talk about market entry strategies into GaN-on-Si for power electronics at this year’s CPSIC conference in Nanjing.

Continue Reading →

ALLOS’ CTO is invited to give a lecture at Osaka University about history of GaN-on-Si development and its future

Thanks to Prof. Ryuji Katayama of Osaka University, ALLOS’ Atsushi Nishikawa is invited to give a lecture this week to undergraduate and graduate students at Osaka University about the history of GaN-on-Si technology and possible future development. For ALLOS it remains important to engage with the academic community and to encourage students and young researchers

Continue Reading →

ICNS 2017: ALLOS explains why carbon-doping is not needed to achieve high isolation in GaN-on-Si

Strasbourg, France – 28th July 2017 – At this week’s ICNS scientific conference ALLOS’ co-founder and CTO Dr. Atsushi Nishikawa discussed three common believes about GaN-on-Si: Firstly, that the usage of carbon would be inevitable, secondly that using interlayers in the buffer would be a source of leakage and thirdly that the choice of the

Continue Reading →

ALLOS was invited to talk about micro LEDs at LED Taiwan 2017

ALLOS Semiconductors’ co-founder and CMO Alexander Loesing was invited to talk about “Who will benefit from micro LEDs with new generation GaN-on-Si?” at last week’s LED industry event in Taiwan. After briefly looking at the challenges of using GaN-on-Si for conventional LEDs the presentation focused on the opportunities and challenges for the LED and silicon

Continue Reading →

ALLOS’ low leakage, doping-free 600 V HEMT epiwafer technology is running in parallel on both Aixtron G5 and Veeco K465i at a customer

Dresden, Germany – 16th February 2017 – The latest generation of ALLOS Semiconductors’ high crystal quality GaN-on-Si process achieves excellent isolation without doping. Applying this technology ALLOS recently concluded the development of customized epi structures with very low leakage for a power electronics customer. The epiwafer growth processes were established in this customer’s Aixtron G5

Continue Reading →

Compound Semiconductor magazine puts „All Eyes on ALLOS“

Based on a background talk with ALLOS’ CEO Burkhard Slischka  and her own research Rebecca Pool of Compound Semiconductor magazine published an article named „All Eyes on ALLOS“. It looks at the latest GaN-on-silicon developments and ALLOS’ role in the industry. It is available free of charge on CS‘ website here (registration might be required).

Continue Reading →

Samsung’s LED strategy – ALLOS comments in CS magazine

Will Samsung transform and conquer the LED industry with disruptive GaN-on-Si technology? Compound Semiconductor magazine gave ALLOS the opportunity to comment on the situation. Read the article in today’s issue of CS magazine or download your copy here.   Background: In the March issue of CS magazine Samsung published an article about its GaN-on-Si LED

Continue Reading →