Category Archives: News in English

Compound Semiconductor magazine puts „All Eyes on ALLOS“

Based on a background talk with ALLOS’ CEO Burkhard Slischka  and her own research Rebecca Pool of Compound Semiconductor magazine published an article named „All Eyes on ALLOS“. It looks at the latest GaN-on-silicon developments and ALLOS’ role in the industry. It is available free of charge on CS‘ website here (registration might be required).

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Samsung’s LED strategy – ALLOS comments in CS magazine

Will Samsung transform and conquer the LED industry with disruptive GaN-on-Si technology? Compound Semiconductor magazine gave ALLOS the opportunity to comment on the situation. Read the article in today’s issue of CS magazine or download your copy here.   Background: In the March issue of CS magazine Samsung published an article about its GaN-on-Si LED

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ALLOS transferred its GaN-on-Si power semiconductor epiwafer technology to industry leader in less than twelve weeks

Dresden, Germany – 11th April 2016 – ALLOS Semiconductors has transferred its latest generation GaN-on-Si epiwafer technology in less than twelve weeks to a major international industry player. This is part of a comprehensive joint project to accelerate the GaN-on-Si power semiconductor product development of that customer. ALLOS Semiconductors today announced the successful completion of

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ALLOS nominated for CS industry award 2016

ALLOS was nominated for the 2016 Compound Semiconductor Industry Award to acknowledge its achievements in 150 and 200 mm GaN-on-Si epiwafer technology. In the Substrates & Materials Award category ALLOS finished among the top three candidates. The entire ALLOS team is very proud and would like to thank you all for your votes and support.

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Epistar is pleased with GaN-on-Si epiwafer technology from ALLOS

Hsinchu, Taiwan – 19th August 2015 – The 150 and 200 mm GaN-on-Si epiwafer technology transfer from ALLOS Semiconductors to Epistar was concluded in record time and with industry leading homogeneities and crystal quality. Epistar Corporation and ALLOS Semiconductors today announced the successful conclusion of their project to establish ALLOS’ mature 150 and 200 mm

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Epistar licenced ALLOS’ GaN-on-Si epiwafer technology

Hsinchu, Taiwan – 11th March 2015 – Epistar licenced GaN-on-Si technology from ALLOS Semiconductors and concluded the first phases of the technology transfer successfully. Leading LED maker Epistar Corporation, Taiwan and the engineering and consulting company ALLOS Semiconductors, Germany announced today that Epistar licensed ALLOS’ unique gallium nitride on silicon (GaN-on-Si) technology and that the

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Newly founded ALLOS Semiconductors offers AZZURRO patents and technology

Dresden, Germany – 15th December 2014 – GaN-on-Si technology expert ALLOS Semiconductors, founded little more than six months ago, announced today that it has acquired the exclusive ownership of all technology, know-how and intellectual property of former AZZURRO Semiconductors. ALLOS Semiconductors GmbH, who is specialised in GaN-on-Si technology and markets, provides engineering and consulting services

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