Veeco Instruments Inc. (Nasdaq: VECO) 与 ALLOS Semiconductors GmbH 今日宣布取得又一阶段的合作成果，双方共同努力，致力于为 microLED 生产应用提供业内领先的硅基氮化镓外延片产品技术。两家公司最近合作的宗旨是，在为全球范围内多家杰出的消费类电子产品公司生产外延片的同时，展示 ALLOS 200 mm 硅基氮化镓外延片产品技术在 Veeco Propel® MOCVD 反应器上的可复制性。
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For the upcoming months ALLOS and its partners are invited to give talks at several major industry and scientific conferences around the globe. October 2018, SEMI Equipment and Manufacturing, Nanchang For October 24, 2018 ALLOS’ CEO Burkhard Slischka is invited by SEMI China to talk about “GaN-on-Si manufacturing for micro LED and High Power Electronics
Read a summary of the talk at he annual conference of the European Material Research Society.
LEDinside黄女士就即将到来的microLED市场采访了德国半导体技术公司ALLOS的首席执行官Burkhard Slischka先生。 在ALLOS看来，硅基氮化镓技术是实现成本控制和增加产量的关键推动因素。 为了证实这个观点，本次采访主要就外延片的均匀性、CMOS生产线的使用和300mm硅基氮化镓外延片的可行性以及LED氮化镓外延片分别以蓝宝石为衬底和硅为衬底时的性能比较这几个观点展开讨论。 您也可以点击这里阅读完整的访问。 LEDinside及其台湾市场新闻媒体Trendforce是LED产业与技术新闻最顶尖的汇集地。我们非常高兴能与他们的读者分享ALLOS就LED 产业未来的看法。这也显示了ALLOS对中国市场的信心和承诺。此外，请不惜赐教，如有疑问我们也很乐意回答您们提出的任何问题。 The English version of the interview you can find here.
LEDinside’s Eva Huang interviewed ALLOS’ CEO Burkhard Slischka about the challenges for the upcoming micro LED market. ALLOS sees GaN-on-Si as a key enabler to achieve the needed cost and yield improvements. To underpin this, the interview covered key issues like wafer uniformity, the usage of CMOS lines, the possibility of 300 mm GaN-on-Si and
ALLOS’ CEO Burkhard Slischka presented ALLOS’ latest developments on epiwafer technology for 1200 V power devices at this week’s CS International conference in Brussels. Beside record breakdown voltages on both vertical and lateral test setups, he also showed the very low trapping effects of the material, which are crucial to achieve good dynamic device performance.
A big surprise hit us this Friday and caused cheer and celebration in the ALLOS team: We won this year’s prestigious Compound Semiconductor Industry Award in the Substrates and Materials category. YES!
Joint press release: Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.
法国阿斯克新城和德国德累斯顿 – 2018 年 2 月 1 日 – 来自电子、微电子及纳米技术研究院 (IEMN) 的最新结果显示，ALLOS 即将推出的适用于 1200 V 器件的硅基氮化镓外延片产品具有超过 1400 V 的纵向和横向击穿电压。
法國阿斯克新城和德國德勒斯登– 2018 年 2 月 1 日 – 來自 IEMN 最新的結果顯示，ALLOS 即將推出用於 1200V 裝置的矽上氮化鎵磊晶圓產品，其崩潰電壓之縱向和橫向量測均超過 1400V。